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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1448
DESCRIPTION *With TO-220 package *High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS *Power amplifier applications *Vertical output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 150 150 5 1.5 0.5 1.5 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA; IB=0 IE=1mA; IC=0 IC=0.5A; IB=50m A VCB=150V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=10V IC=0.5A ; VCE=10V 40 5 MIN 150 5
2SC1448
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V
1.5 20 20 140
V A A
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1448
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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